Microchip Technology
MSCGLQ50A120CTBL1NG
IGBT Modules PM-IGBT-SBD-BL1
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- IGBT Modules
- Mounting Style
- Screw Mount
Technical Specifications
12 parameters- Product
- IGBT Modules
- Configuration
- Half Bridge
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 2.4 V
- Continuous Collector Current at 25 C
- 110 A
- Gate-Emitter Leakage Current
- 150 nA
- Pd - Power Dissipation
- 375 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Country of Origin
- PH
- Maximum Gate Emitter Voltage
- 20 V
- Technology
- Si
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.