ROHM Semiconductor
US6M2TR
MOSFET N+P 20V 1.5A/1A
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Series
- US6M2
- Package
- SOT-363T-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V, 30 V
- Id - Continuous Drain Current
- 1 A, 1.5 A
- Rds On - Drain-Source Resistance
- 240 mOhms, 390 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 700 mV, 500 mV
- Vgs - Gate-Source Voltage
- 4.5 V
- Qg - Gate Charge
- 1.6 nC, 2.1 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1 W
- Configuration
- Dual
Show more parameters (12)
- Channel Mode
- Enhancement
- Height
- 0.77 mm
- Length
- 2 mm
- Transistor Type
- 1 N-Channel MOSFET, 1 P-Channel MOSFET
- Type
- MOSFET
- Width
- 1.7 mm
- Fall Time
- 6 ns, 10 ns
- Rise Time
- 9 ns, 8 ns
- Typical Turn-Off Delay Time
- 15 ns, 25 ns
- Typical Turn-On Delay Time
- 7 ns, 9 ns
- Part # Aliases
- US6M2
- Unit Weight
- 0.000265 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.