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STMicroelectronics

PD85035C

RF MOSFET Transistors RF Power Trans. LDMOST family

Basic Information

View Datasheet ↗
Manufacturer
STMicroelectronics
Product Category
RF MOSFET Transistors
Series
PD85035C
Package
M243
Mounting Style
SMD/SMT
Packaging
Bulk
RoHS
Compliant (source record)

Technical Specifications

17 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
8 A
Vds - Drain-Source Breakdown Voltage
40 V
Gain
14.5 dB
Output Power
35 W
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Configuration
Single
Height
4.45 mm (Max)
Length
9.4 mm (Max)
Operating Frequency
1 GHz
Show more parameters (5)
Type
RF Power MOSFET
Width
6.1 mm (Max)
Channel Mode
Enhancement
Pd - Power Dissipation
108 W
Vgs - Gate-Source Voltage
15 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PD85035C Specifications and Datasheet | ChipSourceHub