Toshiba
MT3S113TU,LF
RF Bipolar Transistors RF Bipolar Transistor .1A 900mW
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- RF Bipolar Transistors
- Series
- MT3S113TU
- Package
- UFM-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 200
- Collector- Emitter Voltage VCEO Max
- 5.3 V
- Emitter- Base Voltage VEBO
- 0.6 V
- Continuous Collector Current
- 100 mA
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Operating Frequency
- 11.2 GHz
- Maximum DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 900 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.