Central Semiconductor
BC337 TIN/LEAD
Bipolar Transistors - BJT NPN 50Vcbo 45Vceo 5.0Vebo 800mA 625mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BC337
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 700 mV
- Pd - Power Dissipation
- 625 mW
- Gain Bandwidth Product fT
- 210 MHz
- Continuous Collector Current
- 800 mA
- DC Collector/Base Gain hfe Min
- 100 at 100 mA, 1 V
- DC Current Gain hFE Max
- 630 at 100 mA, 1 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.