Qorvo
TGF2979-SM
RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Package
- QFN-20
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 11 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 32 V
- Vgs - Gate-Source Breakdown Voltage
- - 2.7 V
- Id - Continuous Drain Current
- 1.8 A
- Output Power
- 22 W
- Maximum Operating Temperature
- + 225 C
- Pd - Power Dissipation
- 49 W
- Configuration
- Single
- Height
- 0.203 mm
Show more parameters (10)
- Length
- 4 mm
- Operating Frequency
- DC to 12 GHz
- Product
- RF JFET Transistor
- Type
- GaN SiC HEMT
- Width
- 3 mm
- Number of Channels
- 1 Channel
- Development Kit
- TGF2979-SMEVB1
- Moisture Sensitive
- Yes
- Part # Aliases
- 1127378
- Unit Weight
- 0.004339 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.