NXP Semiconductors
MRFE6VP6300HR5
RF MOSFET Transistors VHV6 300W50VISM NI780H-4
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- NI-780-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 100 mA
- Vds - Drain-Source Breakdown Voltage
- 130 V
- Gain
- 26.6 dB
- Output Power
- 300 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Operating Frequency
- 1.8 MHz to 600 MHz
- Type
- RF Power MOSFET
- Pd - Power Dissipation
- 1.05 kW
Show more parameters (4)
- Vgs - Gate-Source Voltage
- 10 V
- Vgs th - Gate-Source Threshold Voltage
- 2.2 V
- Part # Aliases
- 935317343178
- Unit Weight
- 0.225605 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.