Toshiba
RN2506(TE85L,F)
Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN2506
- Package
- SOT-25-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
10 parameters- Configuration
- Dual
- Transistor Polarity
- PNP
- Typical Input Resistor
- 4.7 kOhms
- Typical Resistor Ratio
- 0.1
- DC Collector/Base Gain hfe Min
- 80
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Continuous Collector Current
- - 100 mA
- Pd - Power Dissipation
- 300 mW
- Emitter- Base Voltage VEBO
- - 5 V
- Maximum DC Collector Current
- - 100 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.