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onsemi

FDPC8012S

MOSFETs 25V Asymmetric Dual N-Channel Pwr Trench

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
FDPC8012S
Package
Power-33-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

23 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
2 Channel
Vds - Drain-Source Breakdown Voltage
25 V
Id - Continuous Drain Current
88 A
Rds On - Drain-Source Resistance
7.5 Ohms
Vgs - Gate-Source Voltage
- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage
1.6 V
Qg - Gate Charge
25 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
2 W
Show more parameters (11)
Channel Mode
Enhancement
Tradename
PowerTrench
Configuration
Dual
Country of Origin
PH
Fall Time
3 ns
Forward Transconductance - Min
200 S
Rise Time
3 ns
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
34 ns
Typical Turn-On Delay Time
12 ns
Unit Weight
0.006773 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

FDPC8012S Specifications and Datasheet | ChipSourceHub