onsemi
NSVT846MTWFTBG
Bipolar Transistors - BJT DUAL 65V/100MA, NPN & PNP BIPOLAR TRANSISTORS, XDFNW3
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- NST846MTW
- Package
- XDFNW-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
18 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 200 mA
- Collector- Emitter Voltage VCEO Max
- 65 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 600 mV
- Pd - Power Dissipation
- 570 mW
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (6)
- Continuous Collector Current
- 100 mA
- Country of Assembly
- MY
- Country of Diffusion
- MY
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 220 at 2 mA, 5 V
- DC Current Gain hFE Max
- 450 at 2 mA, 5 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.