STMicroelectronics
STX616-AP
Bipolar Transistors - BJT High Voltage NPN power trans
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- STX616
- Package
- TO-92AP-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 500 V
- Emitter- Base Voltage VEBO
- 12 V
- Collector-Emitter Saturation Voltage
- 1 V
- Maximum DC Collector Current
- 2.4 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 4.95 mm
- Length
- 4.95 mm
- Width
- 3.94 mm
- DC Collector/Base Gain hfe Min
- 17 at 500 uA, 2 V, 25 at 200 mA, 5 V, 12 at 500 mA, 5 V, 4 at 1.5 A, 5 V
Show more parameters (2)
- Pd - Power Dissipation
- 2800 mW
- Unit Weight
- 0.010582 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.