MACOM
CGHV14800F
GaN FETs GaN HEMT 1.2-1.4GHz, 800 Watt
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- 440117
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
16 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 24 A
- Vgs th - Gate-Source Threshold Voltage
- - 3.8 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 100 C
- Country of Origin
- US
- Development Kit
- CGHV14800F-TB
- Gain
- 14 dB
- Maximum Operating Frequency
- 1.4 GHz
- Minimum Operating Frequency
- 1.2 GHz
- Output Power
- 800 W
Show more parameters (4)
- Technology
- GaN
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
- Unit Weight
- 2.504187 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.