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Rectron

MMBT5550

Bipolar Transistors - BJT SOT23 NPN 0.6A 160V HighVolt

Basic Information

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Manufacturer
Rectron
Product Category
Bipolar Transistors - BJT
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
140 V
Collector- Base Voltage VCBO
160 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
0.25 V
Maximum DC Collector Current
600 mA
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
250
Continuous Collector Current
600 mA
DC Collector/Base Gain hfe Min
60
Show more parameters (1)
Pd - Power Dissipation
225 mW

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMBT5550 Specifications and Datasheet | ChipSourceHub