Diodes Incorporated
ZTX658QSTZ
Bipolar Transistors - BJT Pwr Hi Voltage Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Ammo Pack
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 400 V
- Collector- Base Voltage VCBO
- 400 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 500 mA
- Gain Bandwidth Product fT
- 50 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 500 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 40
- Pd - Power Dissipation
- 1 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.