ROHM Semiconductor
2SD2662T100
Bipolar Transistors - BJT TRANSISTOR BIPOLAR NPN; 30V 1.5A
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- MPT-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 160 mV
- Maximum DC Collector Current
- 1.5 A
- Gain Bandwidth Product fT
- 330 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 680
- Continuous Collector Current
- 1.5 A
- DC Collector/Base Gain hfe Min
- 270
Show more parameters (3)
- Pd - Power Dissipation
- 500 mW
- Part # Aliases
- 2SD2662
- Unit Weight
- 0.004603 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.