ON Semiconductor
SMBT3946DW1T1G
Bipolar Transistors - BJT SS GP XSTR DUAL 40V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MBT3946DW1T1
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- - 40 V, 60 V
- Emitter- Base Voltage VEBO
- - 5 V, 6 V
- Collector-Emitter Saturation Voltage
- - 250 mV, 200 mV
- Maximum DC Collector Current
- - 200 mA, 200 mA
- Gain Bandwidth Product fT
- 250 MHz, 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 150 mW
Show more parameters (2)
- Qualification
- AEC-Q101
- Unit Weight
- 0.000265 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.