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STMicroelectronics

BCP53-16

Bipolar Transistors - BJT PNP Medium Power

Basic Information

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Manufacturer
STMicroelectronics
Product Category
Bipolar Transistors - BJT
Series
BCP53-16
Package
SOT-223-4
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

18 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 80 V
Collector- Base Voltage VCBO
- 100 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 0.5 V
Maximum DC Collector Current
1 A
Gain Bandwidth Product fT
50 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
250
Height
1.8 mm
Show more parameters (6)
Length
6.3 mm
Width
3.3 mm
Continuous Collector Current
- 1 A
DC Collector/Base Gain hfe Min
40
Pd - Power Dissipation
1600 mW
Unit Weight
0.003951 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BCP53-16 Specifications and Datasheet | ChipSourceHub