ON Semiconductor
NVTJD4001NT1G
MOSFET NFET 30V 250MA 1.5OH
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- MOSFET
- Series
- NTJD4001N
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 250 mA
- Rds On - Drain-Source Resistance
- 1.5 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 800 mV
- Vgs - Gate-Source Voltage
- 4 V
- Qg - Gate Charge
- 0.9 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 272 mW
Show more parameters (10)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Transistor Type
- 2 N-Channel
- Forward Transconductance - Min
- 80 mS
- Fall Time
- 82 ns
- Rise Time
- 23 ns
- Typical Turn-Off Delay Time
- 94 ns
- Typical Turn-On Delay Time
- 17 ns
- Unit Weight
- 0.000265 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.