Central Semiconductor
BCY79 TIN/LEAD
Bipolar Transistors - BJT PNP 45Vcbo 5.0Vebo 100mA 340mW 1W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BCY79
- Package
- TO-18-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 200 mA
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 45 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 250 mV
- Pd - Power Dissipation
- 340 mW
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
Show more parameters (1)
- Continuous Collector Current
- 100 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.