NXP Semiconductors
A2T18S166W12SR3
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 38 W Avg., 28 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- NI-780S-2L2L
- Mounting Style
- Flange Mount
- Packaging
- Reel
Technical Specifications
14 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 1.6 A
- Vds - Drain-Source Breakdown Voltage
- - 5 V, 65 V
- Gain
- 18.1 dB
- Output Power
- 38 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 1805 MHz to 1995 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 1 Channel
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
Show more parameters (2)
- Vgs th - Gate-Source Threshold Voltage
- 1.4 V
- Part # Aliases
- 935363021128
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.