ROHM Semiconductor
EMZ8T2R
Bipolar Transistors - BJT DUAL PNP/NPN
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- EMZ8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 12 V, 50 V
- Collector- Base Voltage VCBO
- 15 V, 60 V
- Emitter- Base Voltage VEBO
- 7 V
- Maximum DC Collector Current
- 0.15 A
- Gain Bandwidth Product fT
- 180 MHz, 260 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 120 at 1 mA, 6 V
- Height
- 0.5 mm
- Length
- 1.6 mm
- Width
- 1.2 mm
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 150 mW
- Part # Aliases
- EMZ8
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.