Central Semiconductor
2N6298 TIN/LEAD
Bipolar Transistors - BJT 60Vcbo 60Vceo 5.0Vebo 8.0A 75W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N6298
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 16 A
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 2 V
- Pd - Power Dissipation
- 75 W
- Gain Bandwidth Product fT
- 4 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
Show more parameters (3)
- Continuous Collector Current
- 8 A
- DC Collector/Base Gain hfe Min
- 750 at 4 A, 3 V
- DC Current Gain hFE Max
- 18000 at 4 A, 3 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.