ROHM Semiconductor
EMF9T2R
Bipolar Transistors - Pre-Biased NPN N-CHANNEL
Basic Information
- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- EMF9
- Package
- EMT-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Configuration
- Dual
- Transistor Polarity
- NPN, N-Channel
- DC Collector/Base Gain hfe Min
- 270
- Maximum Operating Frequency
- 320 MHz
- Collector- Emitter Voltage VCEO Max
- 12 V
- Continuous Collector Current
- 500 mA
- Peak DC Collector Current
- 500 mA
- Pd - Power Dissipation
- 150 mW
- Maximum Operating Temperature
- + 150 C
- Emitter- Base Voltage VEBO
- 6 V
- Channel Mode
- Enhancement
- Maximum DC Collector Current
- 500 mA
Show more parameters (1)
- Part # Aliases
- EMF9
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.