Central Semiconductor
2N3108 TIN/LEAD
Bipolar Transistors - BJT NPN 100Vcbo 60Vceo 7.0Vebo 20pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3108
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
11 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 800 mW
- Gain Bandwidth Product fT
- 60 MHz
- DC Collector/Base Gain hfe Min
- 40
- DC Current Gain hFE Max
- 120
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.