Central Semiconductor
2N5356 APM TIN/LEAD
Bipolar Transistors - BJT PNP 25Vcbo 25Vceo 4.0Vebo 350mA 360mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5356
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Ammo Pack
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 700 mA
- Collector- Emitter Voltage VCEO Max
- 25 V
- Collector- Base Voltage VCBO
- 25 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 360 mW
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (3)
- Continuous Collector Current
- 350 mA
- DC Collector/Base Gain hfe Min
- 200 at 10 V, 2 mA
- DC Current Gain hFE Max
- 500 at 1 V, 50 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.