Nexperia
PBSS5230PAP,115
Bipolar Transistors - BJT 30V 2A PNP/PNP lo VCEsat transistor
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- DFN-2020-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- - 30 V
- Collector- Base Voltage VCBO
- - 30 V
- Emitter- Base Voltage VEBO
- - 7 V
- Collector-Emitter Saturation Voltage
- - 75 mV
- Maximum DC Collector Current
- - 3 A
- Gain Bandwidth Product fT
- 95 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 370
- Continuous Collector Current
- - 2 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 260
- Pd - Power Dissipation
- 1450 mW
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.