Diodes Incorporated
DXT13003DG-13
Bipolar Transistors - BJT 100V NPN 450V Trans 1.3A 3W 4MHz 400mV
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- DXT13003
- Package
- SOT-223-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 450 V
- Emitter- Base Voltage VEBO
- 9 V
- Collector-Emitter Saturation Voltage
- 400 mV
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 4 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 40
- Continuous Collector Current
- 1.3 A
- DC Collector/Base Gain hfe Min
- 5 at 1 A, 2 V
Show more parameters (2)
- Pd - Power Dissipation
- 3 W
- Unit Weight
- 0.003951 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.