Wolfspeed / Cree
CGH60030D-GP4
RF JFET Transistors GaN HEMT Die DC-6.0GHz, 30 Watt
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Brand
- Wolfspeed / Cree
- Product Category
- RF JFET Transistors
- Package
- Die
- Mounting Style
- SMD/SMT
- Packaging
- Waffle
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Type
- HEMT
- Technology
- GaN
- Gain
- 15 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 120 V
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
- Id - Continuous Drain Current
- 3 A
- Output Power
- 30 W
- Configuration
- Dual
- Height
- 100 um
- Length
- 1.66 mm
- Operating Frequency
- 4 GHz to 6 GHz
Show more parameters (5)
- Product
- GaN HEMT
- Width
- 920 um
- Number of Channels
- 2 Channel
- Rds On - Drain-Source Resistance
- 500 mOhms
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.