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ON Semiconductor / Fairchild

FQT4N25TF

MOSFET 250V Single

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Brand
ON Semiconductor / Fairchild
Product Category
MOSFET
Series
FQT4N25
Package
SOT-223-4
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
E

Technical Specifications

23 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
250 V
Id - Continuous Drain Current
830 mA
Rds On - Drain-Source Resistance
1.75 Ohms
Vgs - Gate-Source Voltage
30 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
2.5 W
Configuration
Single
Channel Mode
Enhancement
Show more parameters (11)
Height
1.8 mm
Length
6.5 mm
Transistor Type
1 N-Channel
Type
MOSFET
Width
3.5 mm
Forward Transconductance - Min
1.28 S
Fall Time
22 ns
Rise Time
45 ns
Typical Turn-Off Delay Time
6.4 ns
Typical Turn-On Delay Time
6.8 ns
Unit Weight
0.003951 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

FQT4N25TF Specifications and Datasheet | ChipSourceHub