Central Semiconductor
2N4232
Bipolar Transistors - BJT 3.0A 35W 70Vcbo 60Vceo 2.0V
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N42
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 70 V
- Collector-Emitter Saturation Voltage
- 2 V
- Gain Bandwidth Product fT
- 4 MHz
- DC Current Gain hFE Max
- 100 at 1.5 A, 2 V
- Continuous Collector Current
- 3 A
- DC Collector/Base Gain hfe Min
- 25 at 1.5 A, 2 V
- Pd - Power Dissipation
- 35 W
- Part # Aliases
- 2N4232 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.