ROHM Semiconductor
MMST5086T146
Bipolar Transistors - BJT SMT PNP
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 3 V
- Collector-Emitter Saturation Voltage
- 50 mV
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 40 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 500 at 100 uA, 5 V
- Continuous Collector Current
- 200 mA
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 150 at 10 mA, 5 V
- Pd - Power Dissipation
- 350 mW
- Part # Aliases
- MMST5086
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.