Central Semiconductor
2N6666
Bipolar Transistors - BJT PNP Pwr Darlington
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N6666
- Package
- TO-220-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
9 parameters- Transistor Polarity
- PNP
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Collector-Emitter Saturation Voltage
- 2 V
- Maximum DC Collector Current
- 8 A
- Gain Bandwidth Product fT
- 20 MHz
- Continuous Collector Current
- 0.45 A
- Pd - Power Dissipation
- 65 W
- Unit Weight
- 0.081130 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.