Central Semiconductor
BSX64
Bipolar Transistors - BJT NPN 100Vcbo 80Vceo 5.0Vebo 30MHz 70pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BSX64
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
10 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.8 V
- Gain Bandwidth Product fT
- 30 MHz
- DC Current Gain hFE Max
- 160 at 1000 mA, 1 V
- DC Collector/Base Gain hfe Min
- 63 at 1000 mA, 1 V
- Part # Aliases
- BSX64 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.