Taiwan Semiconductor
TSM5055DCR RLG
MOSFET MOSFET, Dual, N-Ch Trench, 30V, 38A
Basic Information
View Datasheet ↗- Manufacturer
- Taiwan Semiconductor
- Product Category
- MOSFET
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 38 A, 107 A
- Rds On - Drain-Source Resistance
- 8.8 mOhms, 2.7 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.2 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 9.3 nC, 49 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 30 W, 69 W
Show more parameters (9)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Transistor Type
- Asymmetric Dual N-Channel Power MOSFET
- Forward Transconductance - Min
- 27 S, 47 S
- Fall Time
- 14 ns, 49 ns
- Moisture Sensitive
- Yes
- Rise Time
- 65 ns, 79 ns
- Typical Turn-Off Delay Time
- 8.2 ns, 34 ns
- Typical Turn-On Delay Time
- 4.8 ns, 11 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.