Toshiba
RN4910,LF
Bipolar Transistors - Pre-Biased US6-PLN
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN4910
- Package
- US-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN, PNP
- Typical Input Resistor
- 4.7 kOhms
- DC Collector/Base Gain hfe Min
- 120
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Pd - Power Dissipation
- 200 mW
- Collector- Base Voltage VCBO
- - 50 V, 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Height
- 0.9 mm
- Length
- 2 mm
- Type
- PNP/NPN Epitaxial Silicon Transistor
- Width
- 1.25 mm
Show more parameters (2)
- Number of Channels
- 2 Channel
- Maximum DC Collector Current
- - 100 mA, 100 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.