Diodes Incorporated
BC847PNQ-7R-F
Bipolar Transistors - BJT General Purpose Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
15 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Maximum DC Collector Current
- 100 mA
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450
- Continuous Collector Current
- 100 mA
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 200 mW
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.