Toshiba
HN1A01FE-GR,LF
Bipolar Transistors - BJT Bias Resistor Built-in transistor
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- HN1A01
- Package
- ES6-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Polarity
- PNP
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 0.3 V
- Maximum DC Collector Current
- - 150 mA
- Gain Bandwidth Product fT
- 80 MHz
- DC Current Gain hFE Max
- 400
- Continuous Collector Current
- - 150 mA
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 100 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.