Vishay / Siliconix
SISA12BDN-T1-GE3
MOSFETs PPAK1212 N-CH 30V 24A
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFETs
- Series
- SISA
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 24 A
- Rds On - Drain-Source Resistance
- 4.3 mOhms
- Vgs - Gate-Source Voltage
- - 16 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.4 V
- Qg - Gate Charge
- 10 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 4 W
Show more parameters (7)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- MY
- Fall Time
- 10 ns, 12 ns
- Rise Time
- 20 ns, 31 ns
- Typical Turn-Off Delay Time
- 12 ns, 15 ns
- Typical Turn-On Delay Time
- 10 ns, 16 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.