Infineon Technologies
BC847PNH6327XTSA1
Bipolar Transistors - BJT AF TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Series
- BC847
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 60 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450
- Height
- 0.9 mm
Show more parameters (7)
- Length
- 2 mm
- Width
- 1.25 mm
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 250 mW
- Part # Aliases
- 847PN BC BC847PNH6327XT H6327 SP000747288
- Unit Weight
- 0.000265 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.