Semelab / TT Electronics
D2012UK
RF MOSFET Transistors Silicon DMOS RF FET 10W-28V-1GHz SE
Basic Information
View Datasheet ↗- Manufacturer
- TT Electronics
- Brand
- Semelab / TT Electronics
- Product Category
- RF MOSFET Transistors
- Package
- DP
- Mounting Style
- SMD/SMT
Technical Specifications
17 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 4 A
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Gain
- 10 dB
- Output Power
- 10 W
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Height
- 5.08 mm
- Length
- 18.92 mm
- Operating Frequency
- 1 GHz
- Type
- RF Power MOSFET
Show more parameters (5)
- Width
- 6.35 mm
- Channel Mode
- Enhancement
- Pd - Power Dissipation
- 42 W
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V to 7 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.