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Central Semiconductor

CMLT3904EG TR

Bipolar Transistors - BJT NPN Complementary Enhanced

Basic Information

View Datasheet ↗
Manufacturer
Central Semiconductor
Product Category
Bipolar Transistors - BJT
Series
CMLT39
Package
SOT-563
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Dual
Collector- Emitter Voltage VCEO Max
40 V
Collector- Base Voltage VCBO
60 V
Emitter- Base Voltage VEBO
6 V
Maximum DC Collector Current
200 mA
Gain Bandwidth Product fT
300 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
240 at 100 uA, 1 V
DC Collector/Base Gain hfe Min
90 at 100 uA, 1 V
Show more parameters (3)
Pd - Power Dissipation
350 mW
Part # Aliases
CMLT3904EG PBFREE TR
Unit Weight
0.000106 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CMLT3904EG TR Specifications and Datasheet | ChipSourceHub