Toshiba
2SA1182-GR,LF
Bipolar Transistors - BJT PNP Transistor, VCEO=-30V, IC=-0.5A, hFE=200 to 400 in SOT-346 (S-Mini) package
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA1182
- Package
- SC-59-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 30 V
- Collector- Base Voltage VCBO
- - 35 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 0.1 V
- Maximum DC Collector Current
- - 500 mA
- Gain Bandwidth Product fT
- 200 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 125 C
- DC Current Gain hFE Max
- 400
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 70
- Pd - Power Dissipation
- 150 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.