Microchip / Microsemi
APTGT300A170D3G
IGBT Modules DOR CC7032
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- IGBT Modules
- Package
- D3-11
- Mounting Style
- Chassis Mount
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Product
- IGBT Silicon Modules
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 1.7 kV
- Collector-Emitter Saturation Voltage
- 2 V
- Continuous Collector Current at 25 C
- 400 A
- Gate-Emitter Leakage Current
- 400 nA
- Pd - Power Dissipation
- 1.47 kW
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Technology
- Si
- Maximum Gate Emitter Voltage
- 20 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.