STMicroelectronics
STGWA25H120F2
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Transistors
- Series
- STGWA25H120F2
- Mounting Style
- Through Hole
Technical Specifications
11 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 2.5 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 50 A
- Pd - Power Dissipation
- 375 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current
- 25 A
- Gate-Emitter Leakage Current
- 250 nA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.