Microchip Technology
MSCSM120HM50T3AG
MOSFET Modules PM-MOSFET-SIC-SP3F
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- MOSFET Modules
- Mounting Style
- Screw Mount
Technical Specifications
16 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 55 A
- Rds On - Drain-Source Resistance
- 50 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 1.8 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 245 W
- Configuration
- Full Bridge
- Fall Time
- 25 ns
Show more parameters (4)
- Rise Time
- 41 ns
- Type
- Full Bridge SiC MOSFET Power Module
- Typical Turn-Off Delay Time
- 61 ns
- Typical Turn-On Delay Time
- 30 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.