Microchip Technology
APT56M50B2
MOSFETs MOSFET MOS8 500 V 56 A TO-247 MAX
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- MOSFETs
- Package
- T-MAX-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
22 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Id - Continuous Drain Current
- 56 A
- Rds On - Drain-Source Resistance
- 85 mOhms
- Vgs - Gate-Source Voltage
- - 30 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 220 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 780 W
Show more parameters (10)
- Channel Mode
- Enhancement
- Tradename
- Power MOS 8
- Configuration
- Single
- Country of Origin
- PH
- Fall Time
- 33 ns
- Forward Transconductance - Min
- 43 S
- Rise Time
- 45 ns
- Typical Turn-Off Delay Time
- 100 ns
- Typical Turn-On Delay Time
- 38 ns
- Unit Weight
- 0.208116 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.