Vishay / Siliconix
SQM50P04-09L_GE3
MOSFET P-Chnl 40-V (D-S) AEC-Q101 Qualified
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SQ
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 50 A
- Rds On - Drain-Source Resistance
- 7.8 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 145 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 150 W
Show more parameters (13)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Tradename
- TrenchFET
- Height
- 4.83 mm
- Length
- 10.67 mm
- Transistor Type
- 1 P-Channel
- Width
- 9.65 mm
- Fall Time
- 18 ns
- Rise Time
- 13 ns
- Typical Turn-Off Delay Time
- 61 ns
- Typical Turn-On Delay Time
- 12 ns
- Unit Weight
- 0.077603 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.