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onsemi

BC857CLT3G

Bipolar Transistors - BJT 45V 100mA PNP SILCON

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
BC857CL
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

18 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Maximum DC Collector Current
100 mA
Collector- Emitter Voltage VCEO Max
45 V
Collector- Base Voltage VCBO
50 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
650 mV
Pd - Power Dissipation
300 mW
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (6)
Country of Assembly
CN
Country of Diffusion
MY
Country of Origin
CN
DC Collector/Base Gain hfe Min
420 at 2 mA, 5 V
DC Current Gain hFE Max
420 at 2 mA, 5 V
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BC857CLT3G Specifications and Datasheet | ChipSourceHub