Diodes Incorporated
BC857BLP-7
Bipolar Transistors - BJT 250mW 45V
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- BC857B
- Package
- DFN1006-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 650 mV
- Maximum DC Collector Current
- 0.1 A
- Gain Bandwidth Product fT
- 200 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 475
- Height
- 1.5 mm
Show more parameters (4)
- Length
- 1 mm
- Width
- 0.6 mm
- DC Collector/Base Gain hfe Min
- 220
- Pd - Power Dissipation
- 250 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.