Central Semiconductor
2N4126 TRE
Bipolar Transistors - BJT 25Vcbo 25Vceo 4.0Vebo 200mA 625mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N4126E
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 25 V
- Collector- Base Voltage VCBO
- 25 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 0.4 V
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 360 at 2 mA, 1 V
- Continuous Collector Current
- 200 mA
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 60 at 50 mA, 1 V
- Pd - Power Dissipation
- 1.5 W
- Part # Aliases
- 2N4126 PBFREE TRE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.